Dual thin oxide ESD network for nonvolatile memory applications

Details Dual thin oxide ESD network for nonvolatile memory applications Dual thin oxide ESD network for nonvolatile memory applications

1997-04-07

1999-02-16

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257356, 257362, H01L 29788

Patent

active

058723781

ABSTRACT:
An Electric Static Discharge (ESD) protection network for nonvolatile memory using a high voltage dual thin oxide MOSFET. In one aspect, there is a dual oxide electric static discharge (ESD) protective network for nonvolatile memory in which ESD protection is provided using a thick oxide PFET in a thick epitaxial layer with sequence independent circuitry. The dual oxide ESD network includes a high voltage PFET ESD network for 12 V to 5 V applications as well as a low voltage PFET network 5 V to 3 V applications taking advantage of dual oxides supported by the disclosed technology. The circuit saves space, is migratable, improves reliability, and it is voltage differential independent.

REFERENCES:
patent: 5017985 (1991-05-01), Lin
patent: 5442217 (1995-08-01), Mimoto
patent: 5508548 (1996-04-01), Tailliet
patent: 5514889 (1996-05-01), Cho et al.
patent: 5559351 (1996-09-01), Takiyama

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