Dual stress liner device and method

Details Dual stress liner device and method Dual stress liner device and method

2011-08-23

2011-08-23

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S466000, C257SE21409, C257SE21424, C257SE21551, C257SE27006, C257SE29193, C257SE29226, C257SE29255

Reexamination Certificate

active

08004035

ABSTRACT:
A dual stress liner manufacturing method and device is described. Overlapping stress liner layers of opposite effect (e.g., tensile versus compression) may be deposited over portions of the device, and the uppermost overlapping layer may be polished down in a process that uses the bottom overlapping layer as a stopper. An insulating film may be deposited on the stress liner layers before the polishing, and another insulating film may be deposited above the first insulating film after the polishing. Contacts may be formed such that the contacts need only penetrate one stress liner layer to reach a transistor well or gate structure.

REFERENCES:
patent: 5841170 (1998-11-01), Adan et al.
patent: 6046494 (2000-04-01), Brigham et al.
patent: 6573172 (2003-06-01), En et al.
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 6939814 (2005-09-01), Chan et al.
patent: 7022561 (2006-04-01), Huang et al.
patent: 7060549 (2006-06-01), Craig et al.
patent: 7101744 (2006-09-01), Dyer et al.
patent: 7105394 (2006-09-01), Hachimine
patent: 7115954 (2006-10-01), Shimizu et al.
patent: 7187038 (2007-03-01), Morin et al.
patent: 7193254 (2007-03-01), Chan et al.
patent: 7205615 (2007-04-01), Tsutsui et al.
patent: 7214629 (2007-05-01), Luo et al.
patent: 7220630 (2007-05-01), Cheng et al.
patent: 7244644 (2007-07-01), Zhu et al.
patent: 7279746 (2007-10-01), Doris et al.
patent: 7288451 (2007-10-01), Zhu et al.
patent: 7309637 (2007-12-01), Lee et al.
patent: 7314836 (2008-01-01), Golonzka et al.
patent: 7361539 (2008-04-01), Chen et al.
patent: 7396718 (2008-07-01), Frohberg et al.
patent: 7396724 (2008-07-01), Chan et al.
patent: 7402885 (2008-07-01), Sudo
patent: 7417289 (2008-08-01), Tsutsui et al.
patent: 7436030 (2008-10-01), Yang et al.
patent: 7462527 (2008-12-01), Conti et al.
patent: 7470615 (2008-12-01), Costrini et al.
patent: 7470943 (2008-12-01), Yang
patent: 7482215 (2009-01-01), Dyer et al.
patent: 7485521 (2009-02-01), Zhu et al.
patent: 7508053 (2009-03-01), Ting et al.
patent: 7518193 (2009-04-01), Anderson et al.
patent: 7521307 (2009-04-01), Zhu et al.
patent: 7528028 (2009-05-01), Liang et al.
patent: 7531401 (2009-05-01), Baiocco et al.
patent: 7586158 (2009-09-01), Hierlemann et al.
patent: 7592653 (2009-09-01), Sudo
patent: 7659174 (2010-02-01), Lee et al.
patent: 7727834 (2010-06-01), Sudo
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2007/0018328 (2007-01-01), Hierlemann et al.
patent: 2007/0099360 (2007-05-01), Lee et al.
patent: 2007/0108529 (2007-05-01), Huang et al.
patent: 2007/0194382 (2007-08-01), Miyashita et al.
patent: 2009/0001466 (2009-01-01), Yang et al.
patent: 2009/0014807 (2009-01-01), Tang et al.
patent: 2009/0065872 (2009-03-01), Zhu
patent: 2009/0206414 (2009-08-01), Sudo
patent: 2010/0035400 (2010-02-01), Zhu et al.
patent: 2010/0171180 (2010-07-01), Zhang et al.
patent: 2006173432 (2006-06-01), None
patent: 2007-208166 (2007-08-01), None
patent: 2007235074 (2007-09-01), None
2007-177644, JP Notification of Reasons for Rejection, Examiner's Notice date Jan. 25, 2010, mail date Feb. 2, 2010.
H.S. Yang, et al., “Dual Stress Liner for High Performance sub-45nm Gate Length SOI CMOS Manufacturing,” IEEE 2004; IEDM 04, pp. 1075-1077.
2007-177644, JP Notification of Reasons for Rejection, Examiner's Notice date May 23, 2011, mail date May 31, 2011.

Affiliated with

Also associated with

Rating

Dual stress liner device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual stress liner device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual stress liner device and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2734516