Dual storage cell memory including data transfer circuits

Static information storage and retrieval – Systems using particular element – Flip-flop

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365156, 365190, 36523005, 377 67, 377 69, 377 77, G11C 1140, G11C 1900

Patent

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048736651

ABSTRACT:
A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.

REFERENCES:
patent: 4435787 (1984-03-01), Yasuoka
patent: 4575819 (1986-03-01), Amin
patent: 4616347 (1986-10-01), Bernstein
patent: 4672580 (1987-06-01), Yau et al.
patent: 4685085 (1987-08-01), Spence
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4825409 (1989-04-01), Bessolo et al.

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