Dual SOI structure

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor

Reexamination Certificate

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Details

C438S618000, C438S187000, C438S259000, C438S311000, C438S318000, C257SE21561, C257SE27112, C257S368000, C257S369000

Reexamination Certificate

active

07986029

ABSTRACT:
A semiconductor structure having a hybrid crystal orientation is provided. The semiconductor structure includes an insulator layer, e.g., a buried oxide (BOX), on a first semiconductor layer, and a second semiconductor layer on the buried oxide, wherein the first and second semiconductor layers have a first and a second crystal orientation, respectively. A first region of the second semiconductor layer is replaced with an epitaxially grown layer of the first semiconductor layer, thereby providing a substrate having a first region with a first crystal orientation and a second region with a second crystal orientation. An isolation structure is formed to isolate the first and second regions. Thereafter, NMOS and PMOS transistors may be formed on the substrate in the region having the crystal orientation that is the most appropriate.

REFERENCES:
patent: 4478655 (1984-10-01), Nagakubo et al.
patent: 4774196 (1988-09-01), Blanchard
patent: 5627395 (1997-05-01), Witek et al.
patent: 5801080 (1998-09-01), Inoue et al.
patent: 5929486 (1999-07-01), Kitakado
patent: 5994154 (1999-11-01), Morikawa
patent: 6225646 (2001-05-01), Gardner et al.
patent: 6509615 (2003-01-01), Iwata et al.
patent: 6624476 (2003-09-01), Chan et al.
patent: 6635543 (2003-10-01), Furukawa et al.
patent: 6724019 (2004-04-01), Oda et al.
patent: 6724045 (2004-04-01), Ushiku
patent: 6756278 (2004-06-01), Yuki et al.
patent: 6764917 (2004-07-01), Chan et al.
patent: 6815278 (2004-11-01), Ieong et al.
patent: 6830962 (2004-12-01), Guarini et al.
patent: 7033874 (2006-04-01), Itonaga et al.
patent: 7034362 (2006-04-01), Rim
patent: 7102204 (2006-09-01), Berndlmaier et al.
patent: 7205210 (2007-04-01), Barr et al.
patent: 7208815 (2007-04-01), Chen et al.
patent: 7226833 (2007-06-01), White et al.
patent: 7229877 (2007-06-01), Cheng et al.
patent: 7268377 (2007-09-01), Ieong et al.
patent: 7329923 (2008-02-01), Doris et al.
patent: 7524707 (2009-04-01), Adetutu et al.
patent: 2001/0039091 (2001-11-01), Nakagawa
patent: 2003/0119245 (2003-06-01), Iwamatsu et al.
patent: 2005/0082531 (2005-04-01), Rim
patent: 2005/0093104 (2005-05-01), Ieong et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2005/0224875 (2005-10-01), Anderson et al.
patent: 2005/0239241 (2005-10-01), Ouyang et al.
patent: 2006/0046409 (2006-03-01), Fujimaki
patent: 2006/0049460 (2006-03-01), Chen et al.
patent: 2006/0094169 (2006-05-01), White et al.
patent: 2006/0157783 (2006-07-01), Chen et al.
patent: 2006/0292770 (2006-12-01), Wu et al.
patent: 2007/0120218 (2007-05-01), Hsu et al.
patent: 2007/0176236 (2007-08-01), Oka et al.
patent: 2007/0218654 (2007-09-01), Spencer et al.
patent: 2007/0235807 (2007-10-01), White et al.
Pae, S., et al., “Multiple Layers of Silicon-On-Insulator (MLSOI) Islands Fabrication Process and Fully-Depleted SOI pMOSFETs,” Proceedings 1998 IEEE International SOI Conference (Oct. 1998) pp. 15-16.
Subramanian, C.K., et al., “SOI Processing by Epitaxial Lateral Overgrowth,” IEEE (1991) pp. 132-133.
Yang, M., et al., “On the Integration of CMOS with Hybrid Crystal Orientations,” Symposium on VLSI Technology Digest of Technical Papers (2004) pp. 160-161.

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