Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2006-10-03
2006-10-03
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S502000, C257S520000, C257S687000, C257S675000, C257S589000, C257SE21008, C257S585000
Reexamination Certificate
active
07115973
ABSTRACT:
A dual-sided semiconductor device is formed on a wafer with a resistive element that is formed through the wafer. By forming the resistive element through the wafer, a resistive element, such as a large resistive element, can be formed on the wafer that requires very little silicon surface area.
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National Semiconductor Corporation
Nguyen Joseph
Parker Kenneth
Pickering Mark C.
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