Dual pulse method of writing amorphous memory devices

Details Dual pulse method of writing amorphous memory devices Dual pulse method of writing amorphous memory devices

1981-06-10

1983-06-21

Stellar, George G.

Static information storage and retrieval

Systems using particular element

Amorphous

357 2, G11C 1100, H01L 4500

Patent

active

043897134

ABSTRACT:
A first voltage pulse is applied having sufficient amplitude to switch the device from a high to a low resistance state and subsequently maintaining a holding current. A second voltage pulse is applied after the device has switched to drive the filamentous path into the liquid phase for a short duration.

REFERENCES:
patent: 3827033 (1974-07-01), Quilliam

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