Dual-port type semiconductor integrated memory circuit

Static information storage and retrieval – Read/write circuit – Simultaneous operations

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Details

36523001, 36523005, G11C 700

Patent

active

053175360

ABSTRACT:
A dual-port memory circuit includes a memory cell having a pair of nodes, a first port having a first pair of bit lines and a first word line connected to said memory cell, and a second port having a second pair of bit lines and a second word line connected to said memory cell. A detection circuit detects that data is written from one of the first and second ports in a state where the memory cell is selected by both the first and second ports. A control circuit decreases a potential of one of the nodes in response to a detection output of the detection circuit.

REFERENCES:
patent: 4541076 (1985-09-01), Bowers et al.
patent: 4764899 (1988-08-01), Lewallen et al.
patent: 5036491 (1991-07-01), Yamaguchi
patent: 5062081 (1991-10-01), Runaldue

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