Dual-port static random access memory having improved cell...

Static information storage and retrieval – Addressing – Multiple port access

Reexamination Certificate

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C365S230060, C365S189080

Reexamination Certificate

active

11123514

ABSTRACT:
A dual-port memory includes a plurality of memory cells coupled to a row decoder and column logic. Each memory cell includes two storage nodes, where each storage node is coupled to a bit line via an access transistor. Each memory cell also includes a logic gate for logically combining a word line signal with a column address signal and providing the resulting output signal to the gates of the access transistors. In one embodiment, the logic gate is a NOR logic gate and in another embodiment, the logic gate is a transmission gate. This prevents a potential read disturb problem with unselected memory cells of a row. This also reduces power consumption in the memory.

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Quin, Hulfang et al, “SRAM leakage suppression by minimizing standby supply voltage”, Aug. 24, 2004, IEEE, 5th International Symposium on Quality Electronic Design, pp. 55-60, 2004.

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