Dual port random access memory

Details Dual port random access memory Dual port random access memory

1998-12-30

2000-02-15

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Flip-flop

36523005, G11C 700

Patent

active

060260122

ABSTRACT:
A dual port random access memory (RAM). The dual port random access memory includes four N-MOS transistors and four P-MOS transistors. Both the N-MOS and the P-MOS transistors are used as pass gates. More specifically, two N-MOS transistors are used as pass gate for a set of bit lines and two P-MOS transistors are used as a pass gate to another set of bit lines.

REFERENCES:
patent: 5307322 (1994-04-01), Usami et al.
patent: 5381363 (1995-01-01), Bazes
patent: 5742557 (1998-04-01), Gibbins et al.

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