Dual port memory cell with reduced coupling capacitance and...

Static information storage and retrieval – Addressing – Multiple port access

Reexamination Certificate

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C365S063000, C365S154000

Reexamination Certificate

active

11403370

ABSTRACT:
A dual or multi port memory device including a first group of bit lines associated with the first port a second group of bit lines associated with the second port, wherein the bit lines are arranged in different metalization layers and separated horizontally to reduce one or both of stray and coupling capacitance associated with the bit lines. In one exemplary embodiment, the bit lines from each port that are in closer proximity to the bit lines of the other (or another) port are disposed in different metallization layers to reduce coupling capacitance therebetween. One or more further embodiments can include VSSor VDDline(s) located horizontally between the bit lines and metal to substrate contacts for the bit lines can be formed in opposite corners of the memory device to further reduce capacitance.

REFERENCES:
patent: 5287322 (1994-02-01), Rastegar
patent: 5563820 (1996-10-01), Wada et al.
patent: 5808930 (1998-09-01), Wada et al.
patent: 5864706 (1999-01-01), Kurokawa et al.
patent: 5936875 (1999-08-01), Kim et al.
patent: 6084820 (2000-07-01), Raszka

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