Dual oxide channel stop for semiconductor devices

Details Dual oxide channel stop for semiconductor devices Dual oxide channel stop for semiconductor devices

1990-06-01

1991-08-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 53, 437 70, 437185, 357 24, H01L 21302

Patent

active

050432931

ABSTRACT:
The disclosure relates to oxide-semiconductor interfaces which are grown with varying amounts of fixed positive (or negative) charge. The invention utilizes these different values to form a channel stop for a charge transfer device. For HgCdTe two different oxides are used, namely, those produced by wet anodization (having large values of fixed positive charge) and plasma oxidation (having low values of fixed charge). The voltage range of operation of the active gate is determined by the difference in fixed positive charge for these regions and the insulator thicknesses.

REFERENCES:
patent: 3434868 (1969-03-01), Jorgensen
patent: 3463974 (1969-08-01), Kelley et al.
patent: 3649886 (1972-03-01), Kooi
patent: 3787251 (1974-01-01), Brand et al.
patent: 4231149 (1980-11-01), Chapman et al.
patent: 4323589 (1982-04-01), Roy et al.
Sze, Physics of Semiconductor Devices, Wiley, N.Y. .COPYRGT. 1981, pp. 412-416.
Cook, "Anodizing Silicon is Economical Way to Isolate IC Elements", Electronics, Nov. 13, 1975, pp. 109-113.

Affiliated with

Also associated with

Rating

Dual oxide channel stop for semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual oxide channel stop for semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual oxide channel stop for semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1413905