Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-02-06
2007-02-06
Tran, Michael (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230010
Reexamination Certificate
active
11104136
ABSTRACT:
Disclosed is a memory device, which combines a self-refresh enable signal and a power mode decision signal and prevents an internal voltage from being dropped down without the increase of IDD3P current when the memory device performs a self-refresh operation. The memory device includes an operation mode internal voltage generator used in an operation mode, and a controller for enabling the operation mode internal voltage generator while performing a self-refresh operation with a predetermined period and activating a memory cell array of the memory device, even when the memory device is in a stand-by mode.
REFERENCES:
patent: 6487136 (2002-11-01), Hidaka
patent: 6515928 (2003-02-01), Sato et al.
patent: 2004/0027888 (2004-02-01), Kurita
patent: 2005/0018568 (2005-01-01), Tsuda et al.
patent: 2005/0117432 (2005-06-01), Graaff et al.
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Tran Michael
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