Dual mode ferroelectric memory reference scheme

Details Dual mode ferroelectric memory reference scheme Dual mode ferroelectric memory reference scheme

1996-03-27

1998-04-07

Clawson, Jr., Joseph E.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, 365205, 365210, 36518929, 36523003, G11C 700

Patent

active

057372608

ABSTRACT:
A reference scheme for a Dynamic Shadow Random Access Memory which provides a reference voltage circuit used for determining the data state of a ferroelectric memory cell operating in either dynamic (DRAM) or nonvolatile (NVRAM) modes. The reference voltage circuit includes two ferroelectric capacitors with associated data state setting transistors such that in either DRAM or NVRAM operating mode, the two capacitors store opposite data states. The circuit also includes means for alternating the data state of each capacitor. In operation, the ferroelectric capacitors are discharged to associated bitlines producing voltages which are averaged to derive a half-state reference voltage level. The reference voltage is used to determine the state of an associated memory cell. Additionally, a ferroelectric memory circuit is provided which includes an array of reference voltage circuits configured and operated in a manner to reduce the fatigue and imprinting experienced by the reference capacitors.

REFERENCES:
patent: 5218566 (1993-06-01), Papaliolios
patent: 5381364 (1995-01-01), Chern et al.
patent: 5392234 (1995-02-01), Hirano et al.
patent: 5430671 (1995-07-01), Hirano et al.
patent: 5434811 (1995-07-01), Evans et al.
patent: 5467302 (1995-11-01), Hirano et al.
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5592411 (1997-01-01), Tai
patent: 5621680 (1997-04-01), Newman et al.

Affiliated with

Also associated with

Rating

Dual mode ferroelectric memory reference scheme does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual mode ferroelectric memory reference scheme, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual mode ferroelectric memory reference scheme will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-19782