Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-26
2011-04-26
Chu, Chris (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S613000, C257SE21508, C257S708000, C257S784000, C228S004500, C228S180500
Reexamination Certificate
active
07932171
ABSTRACT:
A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.
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Zama, Satoru, et al., “Flip Chip Interconnect Systems Using Copper Wire Stud Bump and Lead Free Solder,” IEEE Transactions on Electronics Packaging Manufacturing, (Oct. 2001), vol. 24, No. 4, pp. 261-268.
Cruz Erwin Victor R.
Joshi Rajeev
Rios Margie T.
Tangpuz Consuelo
Chu Chris
Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
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