Dual metal interconnects for improved gap-fill, reliability,...

Details Dual metal interconnects for improved gap-fill, reliability,... Dual metal interconnects for improved gap-fill, reliability,...

2011-01-11

2011-01-11

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S677000, C438S678000

Reexamination Certificate

active

07867891

ABSTRACT:
Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

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patent: 2010/068530 (2010-06-01), None
International Search Report/Witten Opinion for Patent Application No. PCT/US2009/066334, mailed Jun. 22, 2010, 11 pages.

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