Dual-masked isolation

Details Dual-masked isolation Dual-masked isolation

1998-05-28

1999-06-01

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

059096306

ABSTRACT:
A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a manner which reduces field oxide encroachment, in particular, by forming field oxide islands. The superposition of field isolation configurations define the desired active areas. A presently preferred dual-mask process may be carried out using a single masking stack, or more preferably using a masking stack for each isolation mask. The present isolation process further allows isolation features to be optimized for a variety of isolation requirements on the same integrated circuit.

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Lutze, J.W., A.H. Perera, and J.P. Krusius, Journal of Electrochemical Society, 137(6)1867-1870, Jun. 1990, "Field Oxide Thinning in Poly buffer LOCOS Isolation with jActive Area Spacings to 0.1 .mu.m."

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