Dual-layer EUV mask absorber with trenches having opposing...

Details Dual-layer EUV mask absorber with trenches having opposing... Dual-layer EUV mask absorber with trenches having opposing...

2005-06-03

2008-08-12

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07410733

ABSTRACT:
A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.

REFERENCES:
patent: 6479195 (2002-11-01), Kirchauer et al.
patent: 6699625 (2004-03-01), Lee et al.
patent: 6913706 (2005-07-01), Yan et al.

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