Dual ion beam deposition of dense films

Details Dual ion beam deposition of dense films Dual ion beam deposition of dense films

1985-06-28

1987-06-16

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419225, C23C 1446

Patent

active

046734759

ABSTRACT:
A novel dual ion beam sputtering process for depositing thin films of high density is described. One of the ion beams contains relatively heavy sputtering ions, such as argon ions, for ejecting atoms from a target. The second ion beam is also directed at the target and contains ions having energies of at least 3 electron volts and less than 20 electron volts. The products of the beams are collected on a substrate as a thin film. High density, hydrogenated amorphous semiconductor films, oxide and nitride films, and other films, may be deposited according to the process. The films have densities nearly equal those observed for bulk samples of the same materials. Hydrogenated amorphous silicon films deposited by the process exhibit enhanced photoconductivity.

REFERENCES:
patent: 4376688 (1983-03-01), Ceasar
Leon I. Maissel et al, Handbook of Thin Film Technology, McGraw-Hill Book Co., New York, 1970, pp. 3-15 to 3-24, 4-26 to 4-31.
J. L. Vossen et al, Thin Film Processes, Academic Press, New York, 1978, pp. 189-198.
Brodsky et al., Doping of Sputtered Amorphous Semiconductors, 19, IBM Tech. Disc. Bull., 4802-03 (1977).
Cuomo et al., Multicomponent Film Deposition by Target Biasing, 23, IBM Tech. Disc. Bull., 817-818 (1980).
Weissmantel, Preparation of Hard Coatings by Ion Beam Methods, 63, Thin Solid Films, 315-25 (1979).
Weissmantel et al., Structure and Properties of Quasi-Amorphous Films Prepared by Ion Beam Techniques, 72, Thin Solid Films, 19-31 (1980).

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