Dual glass contact process

Details Dual glass contact process Dual glass contact process

1987-06-02

1989-04-25

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430316, 430317, 430329, 430330, 156643, 156653, 437227, G03C 500

Patent

active

048247677

ABSTRACT:
A method for forming contact openings in semiconductor devices. In borosilicate glass layers deposited over the gate and drain area of a device, followed by a borophosphosilicate glass layer. After masking with photoresist and defining openings, the borophosphosilicate glass is isotropically etched to undercut the resist layer. A plasma etch is utilized to anisotropically etch the borosilicate glass layer and expose the surface of the drain area. After the photoresist is stripped away, a reflow step is employed to reduce the sharp edges of the glass layer and result in a sloped contact opening profile. Good metal coverage is achieved while maintaining isolation of the gate.

REFERENCES:
patent: 4508815 (1985-04-01), Ackmann et al.

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