Dual gated finfet gain cell

Details Dual gated finfet gain cell Dual gated finfet gain cell

2005-11-29

2005-11-29

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S063000

Reexamination Certificate

active

06970372

ABSTRACT:
A memory gain cell for a memory circuit, a memory circuit formed from multiple memory gain cells, and methods of fabricating such memory gain cells and memory circuits. The memory gain cell includes a storage device capable of holding a stored electrical charge, a write device, and a read device. The read device includes a fin of semiconducting material, electrically-isolated first and second gate electrodes flanking the fin, and a source and drain formed in the fin adjacent to the first and the second gate electrodes. The first gate electrode is electrically coupled with the storage device. The first and second gate electrodes are operative for gating a region of the fin defined between the source and the drain to thereby regulate a current flowing from the source to the drain. When gated, the magnitude of the current is dependent upon the electrical charge stored by the storage device.

REFERENCES:
patent: 5580335 (1996-12-01), Smith, IV
patent: 6246083 (2001-06-01), Noble
patent: 6765303 (2004-07-01), Krivokapic et al.
patent: 6888187 (2005-05-01), Brown et al.

Affiliated with

Also associated with

Rating

Dual gated finfet gain cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual gated finfet gain cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual gated finfet gain cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3485415