Dual-gate transistor and pixel structure using the same

Details Dual-gate transistor and pixel structure using the same Dual-gate transistor and pixel structure using the same

2011-07-19

2011-07-19

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21623

Reexamination Certificate

active

07982268

ABSTRACT:
A dual-gate transistor includes a first gate formed on a substrate, a first dielectric layer covering the first gate and the substrate, a semiconductor layer formed on the first dielectric layer, first and second electrodes formed on the semiconductor layer and spaced with an interval in order to separate each other, a second dielectric layer covering the first and second electrodes, and a second gate formed on the second dielectric layer, in which at least one of the first and second gates is non-overlapped with the second electrode.

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