Dual gate oxide high-voltage semiconductor device

Details Dual gate oxide high-voltage semiconductor device Dual gate oxide high-voltage semiconductor device

2005-01-25

2005-01-25

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S367000, C257S409000, C257S487000, C257S507000

Reexamination Certificate

active

06847081

ABSTRACT:
A dual gate oxide high-voltage semiconductor device and method for forming the same are provided. Specifically, a device formed according to the present invention includes a semiconductor substrate, a buried oxide layer formed over the substrate, a silicon layer formed over the buried oxide layer, and a top oxide layer formed over the silicon layer. Adjacent an edge of the top oxide layer, a dual gate oxide is formed. The dual gate oxide allows both specific-on-resistance and breakdown voltage of the device to be optimized.

REFERENCES:
patent: 3936858 (1976-02-01), Seeds et al.
patent: 5246870 (1993-09-01), Merchant
patent: 5300448 (1994-04-01), Merchant et al.
patent: 5362979 (1994-11-01), Merchant
patent: 5412241 (1995-05-01), Merchant
patent: 5420060 (1995-05-01), Gill et al.
patent: 5780900 (1998-07-01), Suzuki et al.
patent: 5893729 (1999-04-01), Roisen et al.
patent: 5969387 (1999-10-01), Letavic et al.
patent: 5973341 (1999-10-01), Letavic et al.
patent: 6028337 (2000-02-01), Letavic et al.
patent: 6127703 (2000-10-01), Letavic et al.
patent: 6133591 (2000-10-01), Letavic et al.
patent: 6221737 (2001-04-01), Letavic et al.
patent: 6232636 (2001-05-01), Simpson et al.
patent: 6310378 (2001-10-01), Letavic et al.
patent: 6372559 (2002-04-01), Crowder et al.
patent: 20020175380 (2002-11-01), Shirahata et al.

Affiliated with

Also associated with

Rating

Dual gate oxide high-voltage semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual gate oxide high-voltage semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual gate oxide high-voltage semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3380207