Dual-gate non-volatile ferroelectric memory

Details Dual-gate non-volatile ferroelectric memory Dual-gate non-volatile ferroelectric memory

2011-07-19

2011-07-19

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C257SE27104, C257SE21663, C257SE21664

Reexamination Certificate

active

07982252

ABSTRACT:
A dual-gate non-volatile memory cell includes a first dielectric layer extending over a first gate, a semiconductor region extending over the first dielectric layer, a second dielectric layer comprising tunnel oxide extending over the semiconductor region, a ferroelectric layer extending over the second dielectric layer, and a second gate extending over the ferroelectric layer.

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