Dual gate nitride process

Details Dual gate nitride process Dual gate nitride process

2005-03-29

2005-03-29

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S724000, C438S757000, C438S775000

Reexamination Certificate

active

06872664

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a wafer substrate having a surface, forming a first nitride layer over the wafer substrate, providing a layer of photoresist over the first nitride layer, patterning and defining the photoresist layer, etching the first nitride layer unmasked by the photoresist to remove at least a portion of the first nitride layer to expose at least a portion of the substrate surface, removing the photoresist layer, and depositing a second nitride layer over the first nitride layer and the exposed substrate surface to form a nitride structure having a first thickness and a second thickness, wherein the first thickness includes a thickness of the first nitride layer.

REFERENCES:
patent: 5445990 (1995-08-01), Yook et al.
patent: 6551883 (2003-04-01), Yen et al.
patent: 6693006 (2004-02-01), Ho et al.
patent: 04-037132 (1992-02-01), None
patent: 2000020897 (2000-04-01), None

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