Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309
Reexamination Certificate
active
07902589
ABSTRACT:
An array of memory cells is arranged in columns and one or more rows on a semiconductor substrate. Each cell has a source, a drain, a first gate and a second gate. The array includes a plurality of gate control lines, each of which corresponds to one of the columns of the memory cells, where each control line connects to the first gate of the memory cell in the corresponding column in each of the rows; and one or more word lines, each of which corresponds to one of the rows of the memory cells, where each word line connects to the second gate of each of the cells in the corresponding row.
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“Office Action of Taiwan counterpart application”, issued on Jan. 12, 2010, p. 1-5.
Ho Chia-Hua
Lue Hang-Ting
Jianq Chyun IP Office
Macronix International Co. Ltd.
Movva Amar
Smith Bradley K
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