Dual gate FinFET

Details Dual gate FinFET Dual gate FinFET

2011-03-01

2011-03-01

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S213000, C257S327000, C257SE29264

Reexamination Certificate

active

07898040

ABSTRACT:
A circuit has a fin supported by a substrate. A source is formed at a first end of the fin and a drain is formed at a second end of the fin. A pair of independently accessible gates are laterally spaced along the fin between the source and the drain. Each gate is formed around approximately three sides of the fin.

REFERENCES:
patent: 6867460 (2005-03-01), Anderson et al.
patent: 2005/0019993 (2005-01-01), Lee et al.
patent: 2005/0145941 (2005-07-01), Bedell et al.
patent: 2006/0292781 (2006-12-01), Lee
patent: 2007/0045736 (2007-03-01), Yagishita
patent: 2007/0054448 (2007-03-01), Choi et al.
patent: 2008/0067613 (2008-03-01), Anderson et al.
patent: 2008/0251779 (2008-10-01), Kakoschke et al.

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