Dual gate dielectric thickness devices

Details Dual gate dielectric thickness devices Dual gate dielectric thickness devices

2006-08-08

2006-08-08

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C257S371000

Reexamination Certificate

active

07087470

ABSTRACT:
A semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: one or more FETs of a first polarity and one or more FETs of a second and opposite polarity, at least one of the one or more FETs of the first polarity having a gate dielectric having a thickness different from a thickness of a gate dielectric of at least one of the one or more FETs of the second polarity.

REFERENCES:
patent: 6191049 (2001-02-01), Song
patent: 6248618 (2001-06-01), Quek et al.
patent: 6602751 (2003-08-01), Oohashi
patent: 6653192 (2003-11-01), Ryoo
patent: 6716685 (2004-04-01), Lahaug
patent: 2001/0031523 (2001-10-01), Kimizuka

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