Amplifiers – With semiconductor amplifying device – Including plural stages cascaded
Reexamination Certificate
2007-04-03
2007-04-03
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural stages cascaded
C330S277000, C330S310000
Reexamination Certificate
active
10956082
ABSTRACT:
A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.
REFERENCES:
patent: 5694069 (1997-12-01), Kasashima et al.
patent: 6292060 (2001-09-01), Yeo et al.
patent: 6894566 (2005-05-01), Claveau et al.
patent: 0115030 (1998-01-01), None
patent: 10-0240421 (2000-01-01), None
Eo Yun-seong
Jeon Sang-yoon
Jung Sung-jae
Kim Hoon-tae
Lee Kwang-du
Lee & Morse P.C.
Nguyen Khanh Van
Samsung Electronics Co,. Ltd.
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