Dual field effect transistor structure employing a single source

Details Dual field effect transistor structure employing a single source Dual field effect transistor structure employing a single source

1991-05-30

1993-07-06

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, 257192, 257 27, 257 11, H01L 2980, H01L 2910, H01L 29161

Patent

active

052257037

ABSTRACT:
A field effect transistor comprises a semi-insulating first compound semiconductor substrate having a surface, a first compound semiconductor active layer disposed at the surface of the substrate and having a first dopant concentration, a gate electrode disposed on the active layer, an epitaxial first compound semiconductor source region disposed on part of the active layer spaced from the gate electrode wherein the source region has a second dopant concentration higher than the first dopant concentration, a source electrode disposed on the source region, an electrically insulating layer disposed on the active layer between the contacting the source region and the gate electrode, a drain region disposed in the substrate adjacent to and in contact with the active layer on an opposite side of the gate electrode from the source region having a dopant concentration intermediate the dopant concentrations of the source region and the active layer, and a drain electrode disposed on the drain region.

REFERENCES:
patent: 5001536 (1991-03-01), Fukuzaw et al.
patent: 5021857 (1991-06-01), Suehiro
patent: 5041393 (1991-08-01), Ahrens et al.
Matsunaga et al., "Half-Micron Gate GaAs . . . Fabrication", IEEE GaAs IC Symposium, 1989, pp. 147-150.
Imamura et al., "A WSi/TiN/Au . . . Using MOCVD", Japanese Journal of Applied Physics, vol. 23, No. 5, 1984, pp. L342-L345.

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