Dual etch stop/diffusion barrier for damascene interconnects

Details Dual etch stop/diffusion barrier for damascene interconnects Dual etch stop/diffusion barrier for damascene interconnects

1999-09-30

2000-11-28

Picardat, Kevin M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257734, 257522, 257276, H01L 214763

Patent

active

06153935&

ABSTRACT:
A damascene interconnect containing a dual etch stop/diffusion barrier. The conductive material of the damascene interconnect is capped with a conductive metal diffusion barrier cap, typically using electroless deposition, and, optionally, with a dielectric etch-stop layer. An optional chemical mechanical polish-stop layer may also be present. The different methods of the invention allow the CMP stop, reactive-ion etch stop, and metal diffusion barrier requirements of the different layers to be decoupled. A preferred conductive material is copper.

REFERENCES:
patent: 5708303 (1998-01-01), Jeng
patent: 5817572 (1998-10-01), Chiang et al.
patent: 6004188 (1999-12-01), Roy

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