Dual EPI active pixel cell design and method of making the same

Details Dual EPI active pixel cell design and method of making the same Dual EPI active pixel cell design and method of making the same

1997-10-10

1999-04-27

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257291, 257436, 257464, H01L 31062, H01L 31113, H01L 2976

Patent

active

058981969

ABSTRACT:
The present invention is a dual epi active pixel sensor cell having a p- region of dual thickness and a method of making the same. The dual epi active pixel sensor cell produces a sensor with improved noise and latch-up reduction and improved red absorption. The thin p- epi region is positioned in the logic region for improved latch-up immunity. The thick p- epi is positioned in the pixel region for improved red absorption.

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