Dual deposition single level lift-off process

Details Dual deposition single level lift-off process Dual deposition single level lift-off process

1986-09-22

1987-08-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156651, 156655, 1566591, 156668, 2041923, 20419232, 427 89, 427 91, 430315, 430329, B44C 122, C03C 1500, C03C 2506, B05D 512

Patent

active

046875417

ABSTRACT:
A dual deposition liftoff process is provided for obtaining clearly defined, planar integrated circuit pattern definition. After developing a photoresist pattern on a substrate, a thin layer of sealing material which is compatible with the integrated circuit is deposited over the photoresist and the uncovered portions of the substrate. The sidewalls of the photoresist are then etched, thereby undercutting the sealing material and forming a lip which overhangs the sidewalls. A second layer of material is deposited on top of the thin layer to provide the required thickness for the integrated circuit. The overhanging lip protects the sidewalls from deposition and thus a good liftoff of the photoresist with its overlying layers is obtained.

REFERENCES:
patent: 3822467 (1974-07-01), Symersky
patent: 4119483 (1978-10-01), Hubsch et al.
patent: 4272561 (1981-06-01), Rothman et al.
patent: 4339305 (1982-07-01), Jones
patent: 4451554 (1984-05-01), Kishi et al.
patent: 4614564 (1986-09-01), Sheldon et al.
patent: 4640738 (1987-02-01), Fredericks et al.

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