Dual damascene structure formed of low-k dielectric materials

Details Dual damascene structure formed of low-k dielectric materials Dual damascene structure formed of low-k dielectric materials

2006-03-21

2006-03-21

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S680000, C438S624000, C438S637000, C438S634000, C438S638000, C438S708000, C438S672000, C438S675000, C438S626000, C438S636000

Reexamination Certificate

active

07015133

ABSTRACT:
A method for forming a dual damascene interconnect structure provides an intermetal dielectric that includes a spin-on low-k dielectric material formed over a CVD low-k dielectric material. A via opening is formed by etching through the spin-on low-k dielectric material and the CVD low-k dielectric material and a plug material is introduced to fill the via opening. A highly selective trench etching operation etches a trench in the upper, spin-on low-k dielectric material and removes the plug material from the via without attacking the lower CVD low-k dielectric material to form the dual damascene opening which is then filled with a conductive interconnect material. The intermetal dielectric formed of multiple low-k dielectric layers provides advantageous electrical and mechanical properties.

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A. Kajita, et al., Highly Reliable Cu/low-k Dual Damascene Interconnect Technology with Hybrid (PAE/SiOC) Dialectrics for 65 nm-node High Performance eDRAM, Proceedings of the IEEE 2003 International Interconnect Technology Conference, Jun. 2003.

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