Dual damascene structure and its manufacturing method

Details Dual damascene structure and its manufacturing method Dual damascene structure and its manufacturing method

1998-07-10

1999-08-03

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438191, 438950, 438787, H01L 21477

Patent

active

059337613

ABSTRACT:
The present invention relates to a dual damascene structure and its manufacturing method. The invention uses two implanting step to form two stop layers. It uses the stop layers to perform an anisotropic etching step so as to form a via and trench. Finally, a conductive layer is filled into the via and trench followed by the completion of forming of the dual damascene structure. The invention controls the etching stop. Another advantage of the present invention is that of using the spacer as the trench mask instead of the multi-mask. Therefore, misalignment is prevented in the present invention.

REFERENCES:
patent: 3622382 (1971-11-01), Brack et al.
patent: 4465705 (1984-08-01), Ishihara et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4925805 (1990-05-01), Van Ommen et al.
patent: 4968636 (1990-11-01), Sugawara
patent: 5091763 (1992-02-01), Sanchez
patent: 5314843 (1994-05-01), Yu et al.
patent: 5316965 (1994-05-01), Philipossian et al.
patent: 5324680 (1994-06-01), Lee et al.
patent: 5429955 (1995-07-01), Joyner et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5672531 (1997-09-01), Gardner et al.
patent: 5677224 (1997-10-01), Kadosh et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5796133 (1998-08-01), Kwon et al.

Affiliated with

Also associated with

Rating

Dual damascene structure and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual damascene structure and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual damascene structure and its manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-859861