Dual damascene structure

Details Dual damascene structure Dual damascene structure

1997-06-30

2000-03-07

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438700, 430618, H01L 214763

Patent

active

060339772

ABSTRACT:
A method for manufacturing a dual damascene structure includes the use of a sacrificial stud and provides an improved defined edge on the interface between the conductive line openings and the via openings.

REFERENCES:
patent: 4523372 (1985-06-01), Balda et al.
patent: 5158910 (1992-10-01), Cooper et al.
patent: 5422309 (1995-06-01), Zettler et al.
patent: 5529953 (1996-06-01), Shoda
patent: 5602423 (1997-02-01), Jain
patent: 5614765 (1997-03-01), Avanzino et al.
patent: 5705430 (1998-01-01), Avanzino et al.
patent: 5710061 (1998-01-01), Cleeves
patent: 5801099 (1998-09-01), Kim et al.

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