Dual damascene process using low-dielectric constant materials

Details Dual damascene process using low-dielectric constant materials Dual damascene process using low-dielectric constant materials

1999-05-12

2000-09-05

Dang, Trung

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438637, 438638, H01L 214763

Patent

active

061142336

ABSTRACT:
A method for forming a dual damascene structure using low-dielectric constant materials is disclosed. The method includes providing a substrate first. A first dielectric layer is formed on the substrate, and the first dielectric layer is then cured to form a stop layer. Then, a second dielectric layer is formed on the stop layer, and the second dielectric layer is cured to form an insulating layer. The insulating layer, the second dielectric layer, the stop layer, and the first dielectric layer are etched to form a via hole, and the insulating layer and the second dielectric layer is then etched to form a trench line.

REFERENCES:
patent: 5705430 (1998-01-01), Avanzino et al.
patent: 5916823 (1999-06-01), Lou et al.
patent: 5989998 (1999-11-01), Sugahara

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