Dual damascene process having tapered vias

Details Dual damascene process having tapered vias Dual damascene process having tapered vias

1995-06-05

1999-02-23

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 1566441, 15665911, 216 46, G03F 726

Patent

active

058742018

ABSTRACT:
A process for forming a dual-damascene interconnect employs a spun-on organic layer above an interlayer dielectric having a set of apertures for vias that forms tapered regions about the apertures without penetrating the apertures; the slope of the tapered regions being transferred in the etching process to form self-aligned tapered vias.

REFERENCES:
patent: 4461672 (1984-07-01), Musser
patent: 4758305 (1988-07-01), Bonifield et al.
patent: 4902377 (1990-02-01), Berglund et al.
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5308742 (1994-05-01), Ta

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