Dual damascene process

Details Dual damascene process Dual damascene process

2008-03-19

2011-11-22

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S625000, C438S640000, C438S702000, C438S703000, C438S717000, C257SE21232, C257SE21233, C257SE21579, C257SE21585

Reexamination Certificate

active

08062971

ABSTRACT:
Structures and methods of forming metallization layers on a semiconductor component are disclosed. The method includes etching a metal line trench using a metal line mask, and etching a via trench using a via mask after etching the metal line trench. The via trench is etched only in regions common to both the metal line mask and the via mask.

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