Dual damascene interconnections having low K layer with...

Details Dual damascene interconnections having low K layer with... Dual damascene interconnections having low K layer with...

2007-09-11

2007-09-11

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S687000

Reexamination Certificate

active

11034309

ABSTRACT:
A method and apparatus is provided for fabricating a dual damascene interconnection. The method begins by forming on a substrate a dielectric layer that includes an organosilicon material, forming a via photoresist pattern over the dielectric layer, and etching a via in the dielectric layer using the via photoresist pattern as an etch mask. The via photoresist pattern is removed and a trench photoresist pattern is formed over the dielectric layer. A trench, connected to the via, is etched in the dielectric layer using the trench photoresist pattern as an etch mask. The trench photoresist pattern is removed and carbon ions are implanted into exposed surfaces of the via and the trench. A barrier layer is formed that overlies the via and the trench. Finally, interconnections are completed by filling the trench and the via with copper.

REFERENCES:
patent: 2001/0014534 (2001-08-01), Aoki et al.
patent: 2003/0130147 (2003-07-01), Koito et al.
patent: 2003/0235996 (2003-12-01), Leon et al.
patent: 2004/0050406 (2004-03-01), Sehgal
patent: 2004/0053498 (2004-03-01), Kaji et al.
patent: 2004/0087166 (2004-05-01), Morrow

Affiliated with

Also associated with

Rating

Dual damascene interconnections having low K layer with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual damascene interconnections having low K layer with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual damascene interconnections having low K layer with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3722491