Dual damascene interconnection in semiconductor device and...

Details Dual damascene interconnection in semiconductor device and... Dual damascene interconnection in semiconductor device and...

2007-09-18

2007-09-18

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000, C438S634000

Reexamination Certificate

active

11024657

ABSTRACT:
A dual damascene interconnection in a semiconductor device is formed to be capable of preventing fluorine (F) component from being diffused through sidewalls of a via hole and a trench. The dual damascene interconnection includes a lower metal interconnection film, an intermetal insulating film having a via hole and a trench and formed on the lower metal interconnection film, first and second insulative spacer films formed on sidewalls of the via hole and the trench, respectively, a barrier metal layer covering the first and second insulative spacer films and the lower metal interconnection film in the via hole and the trench, and an upper metal interconnection film formed on the barrier metal layer, the via hole and the trench being filled with the upper metal interconnection film.

REFERENCES:
patent: 2001/0049195 (2001-12-01), Chooi et al.
patent: 2005/0263892 (2005-12-01), Chun
patent: 2000-91429 (2000-03-01), None

Affiliated with

Also associated with

Rating

Dual damascene interconnection in semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual damascene interconnection in semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual damascene interconnection in semiconductor device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3750798