Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-12-20
2005-12-20
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S759000, C257S750000
Reexamination Certificate
active
06977438
ABSTRACT:
A dual damascene circuit has lower wiring and upper wiring positioned in regions formed as two layers including a CH-based organic polymer layer and a low-permittivity layer made of porous MSQ or the like. The organic polymer layer and the low-permittivity layer have high etching selectively with respect to each other to form an upper groove and a via hole to a good shape, allowing upper wiring and the interconnect line to have good electric characteristics. The organic polymer layer and the low-permittivity layer are low in density and permittivity, thus reducing the effective permittivity of the dual damascene circuit in its entirety.
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patent: 10-112503 (1998-04-01), None
patent: 11-243147 (1999-09-01), None
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patent: 2000-91422 (2000-03-01), None
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Merriam-Webster's Collegiate Dictionary, 10th ed., 1998, p. 14.
English Abstract of JP 2000-294644.
English Abstract of JP 11-243147.
English Abstract of JP 2000-91422.
English Abstract of JP 2000-68376.
NEC Electronics Corporation
Schillinger Laura M.
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