Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-30
2010-12-14
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S335000, C257S337000, C257S339000, C257S342000, C257S409000, C257S492000, C257S493000, C257SE29256, C257SE21417
Reexamination Certificate
active
07851857
ABSTRACT:
A dual current path LDMOSFET transistor (40) is provided which includes a substrate (400), a graded buried layer (401), an epitaxial drift region (404) in which a drain region (416) is formed, a first well region (406) in which a source region (412) is formed, a gate electrode (420) formed adjacent to the source region (412) to define a first channel region (107), and a current routing structure that includes a buried RESURF layer (408) in ohmic contact with a second well region (414) formed in a predetermined upper region of the epitaxial layer (404) so as to be completely covered by the gate electrode (420), the current routing structure being spaced apart from the first well region (406) and from the drain region (416) on at least a side of the drain region to delineate separate current paths from the source region and through the epitaxial layer.
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Bose Amitava
Fu Yue
Khemka Vishnu K.
Roggenbauer Todd C.
Zhu Ronghua
Cannatti Michael Rocco
Dulka John P
Freescale Semiconductor Inc.
Hamilton & Terrile LLP
Toledo Fernando L
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