Dual crystal orientation circuit devices on the same substrate

Details Dual crystal orientation circuit devices on the same substrate Dual crystal orientation circuit devices on the same substrate

2006-09-29

2009-08-04

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S627000, C257SE29004

Reexamination Certificate

active

07569857

ABSTRACT:
Embodiments of the invention provide a substrate with a device layer having different crystal orientations in different portions or areas. One layer of material having one crystal orientation may be bonded to a substrate having another crystal orientation. Then, a portion of the layer may be amorphized and annealed to be re-crystallized to the crystal orientation of the substrate. N- and P-type devices, such as tri-gate devices, may both be formed on the substrate, with each type of device having the proper crystal orientation along the top and side surfaces of the claimed region for optimum performance. For instance, a substrate may have a portion with a <100> crystal orientation along a top and sidewalls of an NMOS tri-gate transistor and another portion having a <110> crystal orientation along parallel top and sidewall surfaces of a PMOS tri-gate transistor.

REFERENCES:
patent: 7291886 (2007-11-01), Doris et al.
patent: 2005/0009305 (2005-01-01), Anderson et al.
patent: 2005/0184283 (2005-08-01), Maeda et al.
patent: 2007/0108528 (2007-05-01), Anderson et al.
patent: 2007/0254412 (2007-11-01), Dyer et al.
Brian S. Doyle et al., U.S. Appl. No. 11/234,014, filed Sep. 22, 2005, entitled “Multiple Crystal Orientations on the Same Substrate”, 33 pgs inc. Figures.
Mohamad A. Shaheen et al., U.S. Appl. No. 11/377,475, filed Mar. 15, 2006, entitled “Formation of a Multiple Crystal Orientation Substrate”, 44 pgs inc. Figures.
Mohamad A. Shaheen et al., U.S. Appl. No. 11/453,444, filed Jun. 14, 2006, entitled “Ultra-Thin Oxide Bonding for S1 to S1 Dual Orientation Bonding”, 19 pgs inc. Figures.

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