Dual comparator circuit and method for selecting between normal

Static information storage and retrieval – Read/write circuit – Bad bit

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36518509, 36518907, G11C 700

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active

058417125

ABSTRACT:
A redundancy circuit and method allows replacement of failed memory cells in a semiconductor memory array. Redundancy true and redundancy not comparator circuits are provided in dynamic logic to selectively enable and disable respective redundant row predecode and normal row predecode circuits. In one embodiment, redundancy circuits are row redundancy circuits. As compared with single static row redundancy comparator circuits which are limited by setup time constraints and which degrade access time irrespective of redundant row utilization, a dual dynamic comparator design reduces access time penalties when redundancy is enabled and eliminates access time penalties when redundancy is not required in a particular semiconductor memory array.

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