Dual channel D.C. low noise measurement system and test methodol

Details Dual channel D.C. low noise measurement system and test methodol Dual channel D.C. low noise measurement system and test methodol

1992-11-02

1995-07-18

Pellinen, A. D.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219209, 3241581, 361 38, F27D 1102, H05B 1100, H02H 704

Patent

active

054343852

ABSTRACT:
A test system having an improved physical layout and electrical design allows the 1/f noise of metal interconnects to be measured at levels close to that of Johnson or thermal noise. A detailed description of examples of operation of the test system provides evidence of the effectiveness of the test system in minimizing system noise to a level significantly lower than Johnson noise. This permits quantitative measurment of the noise contribution attributable to variations in cross-sectional area of connections for various applications and for qualitative prediction of electromigration lifetimes of metal films, particularly aluminum, having different microstructures. The test system includes an enclosure which includes several nested groups of housings including a sample oven within a device under test box which is, in turn, contained within the system enclosure. Wire wound resistors powered by a DC power supply are used to provide heating without interfering with measurement of 1/f noise of a device under test (D.U.T.). A biasing circuit and a bank of batteries are also provided with separate enclosures within the system enclosure.

REFERENCES:
patent: 4331285 (1982-05-01), Gottwals
patent: 4483629 (1984-11-01), Schwarz et al.
patent: 4554608 (1985-11-01), Block
patent: 4570156 (1986-02-01), Nicholas, Jr.
patent: 4739258 (1988-04-01), Schwarz
patent: 4949031 (1990-08-01), Szaez et al.
patent: 4978914 (1990-12-01), Akimoto et al.
patent: 4991051 (1991-02-01), Hung
patent: 4992624 (1991-02-01), Benson et al.
patent: 5045637 (1991-09-01), Sato et al.
patent: 5045638 (1991-09-01), Wada et al.
patent: 5049811 (1991-09-01), Dreyer et al.
patent: 5057441 (1991-10-01), Gutt et al.
IEEE Electron Device Letters, vol. 2., No. 5, May 1991 by A. M. Yassine, et al entitled "Characterization of Probe Contact Noise for Probes Used in Wafer-Level Testing".
"1/f Noise and Grain-Boundary Diffusion in Aluminum and Aluminum Alloys"; Koch et al.; vol. 55, No. 22, Physical Review Letters; Nov. 1985 The American Physical Society; pp. 2487-2490.

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