Dual chamber system providing simultaneous etch and...

Details Dual chamber system providing simultaneous etch and... Dual chamber system providing simultaneous etch and...

2011-03-08

2011-03-08

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S492000, C438S695000

Reexamination Certificate

active

07902047

ABSTRACT:
A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.

REFERENCES:
patent: 5679152 (1997-10-01), Tischler et al.
patent: 6897138 (2005-05-01), Watanabe et al.
patent: 7288830 (2007-10-01), Shibata
patent: 7332031 (2008-02-01), Tischler et al.

Affiliated with

Also associated with

Rating

Dual chamber system providing simultaneous etch and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual chamber system providing simultaneous etch and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual chamber system providing simultaneous etch and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2715663