Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-16
2005-08-16
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S320000, C257S321000, C257S322000
Reexamination Certificate
active
06930348
ABSTRACT:
The dual bit split gate flash memory of the invention comprises a plurality of memory cells wherein each memory cell comprises a select gate overlying a substrate and isolated from the substrate by a select gate oxide layer, a first and second floating gate on opposite sidewalls of the select gate and isolated from the select gate by an oxide spacer, and a control gate overlying the select gate and the first and second floating gates and isolated from the select gate and the first and second floating gates by a dielectric layer, and source and drain regions within the substrate and shared by adjacent memory cells.
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Huynh Andy
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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