Dual-bit memory device having isolation material disposed...

Details Dual-bit memory device having isolation material disposed... Dual-bit memory device having isolation material disposed...

2006-12-27

2011-12-13

Bryant, Kiesha (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE27103

Reexamination Certificate

active

08076715

ABSTRACT:
A dual-bit memory device is provided which includes trench isolation material disposed below a bit line that is shared by adjacent memory cells. The dual-bit memory device comprises a substrate, a first memory cell designed to store two bits of information, a second memory cell designed to store two bits of information, and an insulator region. The first memory cell is adjacent to the second memory cell. The first memory cell includes a first buried bit line and a second buried bit line. The first memory cell and the second memory cell share the second buried bit line. The insulator region is disposed in the substrate below the second buried bit line to prevent electrons from flowing between the first memory cell and the second memory cell.

REFERENCES:
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patent: 6261902 (2001-07-01), Park et al.
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