Dry etching with hydrogen bromide or bromine

Details Dry etching with hydrogen bromide or bromine Dry etching with hydrogen bromide or bromine

1993-05-27

1994-05-31

Jones, W. Gary

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 156662, H01L 21306

Patent

active

053166167

ABSTRACT:
Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control of attaining vertical etching or taper etching with a desired taper angle by controlling a temperature of a mass to be etched, which mass is a phosphorus-doped n-type polycrystalline silicon, phosphorus-doped single crystalline or phosphorus-doped silicides semiconductor wafer.

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Chen et al., "Tapered Via Hole", IBM Technical Disclosure Bulletin, vol. 26, No. 12, May 1984, p. 6282.
Keaton et al., Temperature and Flow Effects in Aluminum Etching Using Bromine-Containing Plasmas, J. Vac. Sci. Technol. B6 (1) Jan./Feb. 1988 pp. 72-76.
Sinichi Tachi et al., Low-temperature Reactive Ion Etching and Microwave Plasma Etching of Silicon, Apply. Phys. Lett 52 (8), Feb. 22, 1988 pp. 616-618.
Hirofumi Uchida, Submicron Trench Etching Under High Pressure, 1046B Extended Abstracts/Electrochemical Society 87-2 (1987) Princeton, N.J., pp. 1038-1039.
Ahmed M. El-Masry et al., Magnetically Enhanced Reactive Ion Etching of Silicon in Bromine Plasmas, J. of Vac. Sci. Technol B6 (1988) Jan.-Feb. No. 1, Woodbury, N.Y., USA, pp. 257-262.
H. Okano et al. Down-Flow Process in VLSI Manufacturing, Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, 1988, pp. 549-552.

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