Dry etching process for gallium arsenide excellent in selectivit

Details Dry etching process for gallium arsenide excellent in selectivit Dry etching process for gallium arsenide excellent in selectivit

1991-12-23

1994-11-15

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156664, H01L 2100

Patent

active

053644999

ABSTRACT:
A dry etching process achieves an excellent selectivity between aluminum gallium arsenide and gallium arsenide, and gaseous mixture containing chlorine and sulfur hexafluoride is used as an etchant for selectively etching the gallium arsenide with respect to the aluminum gallium arsenide without sacrifice of the controllability of the dry etching system as well as of the environment.

REFERENCES:
patent: 4734152 (1988-03-01), Geis et al.
patent: 4874459 (1989-10-01), Coldren et al.
"Reactive Ion Etching of Gallium Arsenide, Aluminum Gallium Arsenide-to-Aluminum Gallium Arsenide Selectivity Using Sulfur Hexafluoride And Silicon, Tetrachloride"; Appl. Phys. Lett. 51 (14), 1083-5, 1987, Salimian et al.
"Reactive Ion Etching of Gallium Arsenide, Aluminum Gallium Arsenide, Gallium Antimonide In Chlorine And Tetrachlorosilane"; J. Vac. Sci. Technology, B, 8(4), 607-17; 1990; Pearton et al.

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